Electrodeposition of wide band gap InGaxSyOz thin films for solar cell applications

Materials Science and Engineering: B

Volumn 164, Issue 3, 2009, Pages 180-185

  Haleem, A M Abdel ^a   Ichimura, M ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Cd free buffer layer; Electrochemical deposition; Indium Gallium sulfide oxide; Solar cells; Thin films

Indexed keywords

BUFFER LAYERS; CADMIUM SULFIDE; ELECTROCHEMICAL DEPOSITION; ENERGY GAP; GALLIUM COMPOUNDS; GLASS SUBSTRATES; II-VI SEMICONDUCTORS; INDIUM SULFIDE; ITO GLASS; IV-VI SEMICONDUCTORS; LAYERED SEMICONDUCTORS; LIGHT SENSITIVE MATERIALS; LIGHT TRANSMISSION; PHOTOSENSITIVITY; REDUCTION; THIN FILM SOLAR CELLS; TIN OXIDES; X RAY DIFFRACTION;

AQUEOUS BATHS; CD-FREE BUFFER LAYER; COATED GLASS; ELECTROCHEMICAL DEPOSITION; GALLIUM SULFIDE; INDIUM GALLIUM SULPHIDE OXIDE; OXIDE THIN FILMS; SOLAR-CELL APPLICATIONS; THIN-FILMS; WIDE-BAND-GAP;

THIN FILMS;

EID: 71749101230     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.09.013     Document Type: Article

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