Electrochemical deposition of GaSxOy thin films

Japanese Journal of Applied Physics

Volumn 48, Issue 6, 2009, Pages

  Chowdhury, Supria ^a   Ichimura, Masaya ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AQUEOUS SOLUTIONS; AS-DEPOSITED FILMS; COATED GLASS SUBSTRATES; ELECTROCHEMICAL DEPOSITION; ENERGY BANDGAPS; FLUORINE DOPED TIN OXIDE; HIGH TRANSMISSION; INDIUM TIN OXIDE; N-TYPE CONDUCTION; OPTICAL TRANSMISSION SPECTROSCOPY; OPTIMUM CONDITIONS; PHOTOELECTROCHEMICAL MEASUREMENTS; WIDE-BAND-GAP SEMICONDUCTOR;

DEPOSITION; DOPING (ADDITIVES); ELECTRODEPOSITION; ENERGY GAP; FLUORINE; GALLIUM ALLOYS; LIGHT TRANSMISSION; OPTICAL MICROSCOPY; OXIDE FILMS; REDUCTION; SCANNING ELECTRON MICROSCOPY; SODIUM; SOLAR ENERGY; THIN FILMS; TIN;

AUGER ELECTRON SPECTROSCOPY;

EID: 68649089096     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.061101     Document Type: Article

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