Integration of InGaN quantum dots into nitride-based microcavities

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 2320-2322

  Kruse, C ^a   Figge, S ^a   Dartsch, H ^a   Tessarek, C ^a   Hommel, D ^a   Lohmeyer, H ^a   Kalden, J ^a   Sebald, K ^a   Gutowski, J ^a  

^a UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; ALGAN/GAN; CAVITY LAYERS; CAVITY STRUCTURE; INGAN QUANTUM DOTS; METAL-ORGANIC; MICROPHOTOLUMINESCENCE; OPTICAL SPECTRA; PLANAR CAVITIES; Q-FACTORS; QUANTUM DOT; SHARP EMISSION; SMALL-DIAMETER; TRANSVERSAL MODES; TWO-STEP DEPOSITION; VAPOUR-PHASE;

CRYSTAL GROWTH; GALLIUM NITRIDE; OPTICAL WAVEGUIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 71549161700     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778736     Document Type: Conference Paper

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