A comparative study of photoconductivity and carrier transport in a-Si:H p-i-n solar cells with different back contacts

Solid-State Electronics

Volumn 54, Issue 1, 2010, Pages 22-27

  Kaplan, R ^a   Kaplan, B ^a   Hegedus, S S ^b  

^a MERSIN UNIVERSITY   (Turkey)

^b UNIVERSITY OF DELAWARE   (United States)

Author keywords

a Si:H p i n solar cells; Back reflectors; Photocurrent; Quantum efficiency; Recombination; Trapping

Indexed keywords

A-SI:H; A-SI:H P-I-N SOLAR CELLS; BACK CONTACT; BACK REFLECTORS; COMPARATIVE STUDIES; EXCITATION INTENSITY; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; FLUX DENSITIES; FREQUENCY DEPENDENCE; FREQUENCY EFFECT; HYDROGENATED AMORPHOUS SILICON (A-SI:H); ILLUMINATION LEVELS; J-V CHARACTERISTICS; MODULATION FREQUENCIES; P-I-N CELLS; PHOTOCURRENT MEASUREMENT; POWER-LAW RELATIONSHIP; RECOMBINATION KINETICS; REVERSE BIAS; SOLAR CELL PERFORMANCE; SPECTRAL DISTRIBUTION; SPECTRAL PHOTORESPONSE; TEMPERATURE DEPENDENCE;

ACTIVATION ENERGY; AMORPHOUS SILICON; BIAS VOLTAGE; CHROMIUM; PHOTOCURRENTS; REFLECTION; SEMICONDUCTOR QUANTUM DOTS; SILVER; SOLAR CELLS;

QUANTUM EFFICIENCY;

EID: 71549160350     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.09.008     Document Type: Article

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