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Volumn 6, Issue 1, 2006, Pages 114-118

Intensity and temperature dependence of photocurrent of a-Si:H Schottky diodes

Author keywords

a Si:H Schottky diode; Electric field profile; Intensity and temperature dependence; Recombination

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS SILICON; CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; PHOTOCURRENTS;

EID: 27544465812     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2005.03.002     Document Type: Article
Times cited : (10)

References (24)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.