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Volumn 6, Issue 1, 2006, Pages 114-118
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Intensity and temperature dependence of photocurrent of a-Si:H Schottky diodes
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Author keywords
a Si:H Schottky diode; Electric field profile; Intensity and temperature dependence; Recombination
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Indexed keywords
ACTIVATION ENERGY;
AMORPHOUS SILICON;
CHARGE CARRIERS;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC FIELD EFFECTS;
PHOTOCURRENTS;
A-SI:H SCHOTTKY DIODE;
ELECTRIC FIELD PROFILE;
INTENSITY- AND TEMPERATURE-DEPENDENCE;
RECOMBINATION;
SCHOTTKY BARRIER DIODES;
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EID: 27544465812
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2005.03.002 Document Type: Article |
Times cited : (10)
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References (24)
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