Using electronic coherence to probe a deeply embedded quantum well in bimetallic Pb/Ag films on Si(111)

Physical Review Letters

Volumn 103, Issue 24, 2009, Pages

  Brinkley, M K ^a   Liu, Y ^a   Speer, N J ^a   Miller, T ^a   Chiang, T C ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AG FILMS; ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; ELECTRONIC COHERENCE; ESCAPE DEPTH; OVERLAYERS; PB FILM; QUANTUM WELL; SI (1 1 1); STRUCTURE CHARACTERISTIC;

ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; LEAD; PHOTOEMISSION; PROBES; QUANTUM THEORY; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

SILVER;

EID: 71549157773     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.103.246801     Document Type: Article

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