SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 1, 2009, Pages 196-199

Wafer-Level Fabrication and Gas Sensing Properties of miniaturized gas sensors based on Inductively Coupled Plasma Deposited Tin Oxide Nanorods

(7) Forleo, A a Francioso, L a Capone, S a Casino, F a Siciliano, P a Tan, O K b Hui, H b

a CNR (Italy)

b NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Gas sensors; Nanorods; plasma enhanced chemical vapor deposition (PECVD); SnO2

Indexed keywords

AVERAGE DIAMETER; GAS SENSING; GAS SENSING PROPERTIES; GAS SENSORS; GROWTH CONDITIONS; HIGH TEMPERATURE TREATMENTS; IN-SITU; INDUCTIVELY-COUPLED; NEEDLE SHAPE; SOLID STATE GAS SENSORS; TIN OXIDE NANORODS; WAFER LEVEL; WAFER-LEVEL FABRICATION;

CHEMICAL SENSORS; GAS DETECTORS; GAS SENSING ELECTRODES; GASES; INDUCTIVELY COUPLED PLASMA; NANORODS; PLASMA DEPOSITION; TIN;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 71549155924 PISSN: 18766196 EISSN: None Source Type: Conference Proceeding
DOI: 10.1016/j.proche.2009.07.049 Document Type: Conference Paper

Times cited : (10)

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