Silicon Carbide (SiC) top-down nanowire electromechanical resonators

TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems

Volumn , Issue , 2009, Pages 2246-2249

  Feng, X L ^a   Matheny, M H ^a   Karabalin, R B ^a   Zorman, C A ^b   Mehregany, M ^b   Roukes, M L ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Case Western Reserve University   (United States)

Author keywords

Nanoelectromechanical Systems (NEMS); Nanowire; Resonant sensor; Resonator; Silicon Carbide (SiC); Switch

Indexed keywords

MEMS; NANOWIRES; NEMS; RESONATORS; SIGNAL TRANSDUCTION;

ELECTROMECHANICAL RESONATORS; EXPERIMENTAL REALIZATIONS; NANO SCALE; NANOELECTROMECHANICAL SYSTEM; NANOMACHINING; RESONANT SENSORS; SILICON CARBIDE; SILICON CARBIDE NANOWIRES; TOPDOWN; VERY HIGH FREQUENCY;

SILICON CARBIDE;

EID: 71449084503     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2009.5285595     Document Type: Conference Paper

References (3)

1. X.L. Feng, R.R. He, P.D. Yang, M.L. Roukes, "Very High Frequency Silicon Nanowire Electromechanical Resonators", Nano Lett., vol. 7, pp. 1953-1959, 2007.
2. R.R. He, X.L. Feng, M.L. Roukes, P.D. Yang, "Self-Transducing Silicon Nanowire Electromechanical Systems at Room Temperature", Nano Lett., vol. 8, pp. 1756-1761, 2007.
3. X.M.H. Huang, X.L. Feng, C.A. Zorman, M. Mehregany, M.L. Roukes, "VHF, UHF and Microwave Frequency Nanomechanical Resonators", New J. Phys., vol. 7, art. no. 247, 2005.