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Volumn 30, Issue 2, 2009, Pages 223-231
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Electrical interfacing of neurotransmitter receptor and field effect transistor
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Author keywords
[No Author keywords available]
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Indexed keywords
AUTONOMOUS DYNAMICS;
BIPHASIC;
CURRENT COMPENSATION;
DRIVING VOLTAGES;
ELECTRICAL INTERFACING;
EXTERNAL DRIVING;
FREE MEMBRANE;
GENETICALLY MODIFIED;
HEK293 CELLS;
HIGH SPECIFICITY;
ION CURRENTS;
LIGAND-GATED ION CHANNELS;
POSITIVE SIGNALS;
POTASSIUM CHANNELS;
PROOF-OF-PRINCIPLE EXPERIMENTS;
SEROTONIN RECEPTORS;
TRANSISTOR JUNCTION;
UNDER VOLTAGE;
BIOSENSORS;
MICROELECTRONICS;
FIELD EFFECT TRANSISTORS;
NEUROTRANSMITTER RECEPTOR;
POTASSIUM CHANNEL KV1.3;
SEROTONIN 3 RECEPTOR;
ARTICLE;
CELL STRAIN HEK293;
DIFFUSION;
ELECTROPHYSIOLOGY;
GENETIC PROCEDURES;
HUMAN;
ION TRANSPORT;
METABOLISM;
METHODOLOGY;
SEMICONDUCTOR;
BIOSENSING TECHNIQUES;
DIFFUSION;
ELECTROPHYSIOLOGY;
HEK293 CELLS;
HUMANS;
ION TRANSPORT;
KV1.3 POTASSIUM CHANNEL;
RECEPTORS, NEUROTRANSMITTER;
RECEPTORS, SEROTONIN, 5-HT3;
TRANSISTORS, ELECTRONIC;
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EID: 71249113933
PISSN: 12928941
EISSN: 1292895X
Source Type: Journal
DOI: 10.1140/epje/i2009-10461-3 Document Type: Article |
Times cited : (12)
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References (22)
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