Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector

Wuli Xuebao/Acta Physica Sinica

Volumn 58, Issue 11, 2009, Pages 7952-7957

  Zhang, Shuang ^a   Zhao, De Gang ^a   Liu, Zong Shun ^a   Zhu, Jian Jun ^a   Zhang, Shu Ming ^a   Wang, Yu Tian ^a   Duan, Li Hong ^a   Liu, Wen Bao ^a   Jiang, De Sheng ^a   Yang, Hui ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaN; Leakage current; UV detector; V pits

Indexed keywords

EID: 71249094721     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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