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Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 2-3, 2009, Pages 76-78

Anomalous strain relaxation and light-hole character enhancement in GaAs capped InAs/In0.53Ga0.47As quantum ring

(4) Moon, Pilkyung a Park, Kwangmin a Yoon, Euijoon a Leburton, Jean Pierre b

a Seoul National University (South Korea)

b University of Illinois at Urbana Champaign (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; GAAS; HOLE STATE; INAS; LATERAL DIRECTIONS; MATRIX; POTENTIAL BARRIERS; POTENTIAL WELLS; QUANTUM DOT; QUANTUM RING; STRAIN PROFILES;

ELECTRONIC STRUCTURE; GALLIUM ALLOYS; INDIUM ARSENIDE; NANORINGS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM DOTS;

QUANTUM THEORY;

EID: 71149100843 PISSN: 18626254 EISSN: 18626270 Source Type: Journal
DOI: 10.1002/pssr.200802277 Document Type: Article

Times cited : (9)

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