Post-annealing effect upon electrical and optical properties of MOVPE grown P-doped ZnTe homoepitaxial layers

Journal of Materials Science: Materials in Electronics

Volumn 20, Issue SUPPL. 1, 2009, Pages

  Saito, Katsuhiko ^a   Yamaguchi, Kouji ^a   Tanaka, Tooru ^a   Nishio, Mitsuhiro ^a   Guo, Qixin ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENTS; ELECTRICAL AND OPTICAL PROPERTIES; HOMOEPITAXIAL LAYERS; LINEAR RELATIONSHIPS; METAL-ORGANIC VAPOUR PHASE EPITAXY; MOVPE; PHOSPHORUS-DOPED; PL PROPERTY; POST ANNEALING TREATMENT; POST-ANNEALING EFFECT; REVERSIBLE CHANGE; TRANSPORT RATE;

ANNEALING; BIOACTIVITY; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC PROPERTIES; PHOSPHORUS; SEMICONDUCTING ZINC COMPOUNDS;

OPTICAL PROPERTIES;

EID: 71149086931     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-008-9571-y     Document Type: Conference Paper

References (3)

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2. T. Tanaka, M. Nishio, K Hayashida, K. Fujimoto, Q. Guo, H. Ogawa, J. Cryst. Growth 298, 437 (2007)
3. K Saito, K Fujimoto, K Yamaguchi, T. Tanaka, M. Nishio, Q. Guo, H. Ogawa, Phys. Stat. Sol. (b) 244, 1634 (2007)