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Volumn , Issue , 2009, Pages 625-627

Permittivity enhancement and dielectric relaxation of doped hafnium and zirconium oxide

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION OF; CRYSTALLINE PHASIS; DOPED ZIRCONIA; FREQUENCY DISPERSION; K-VALUES; ZIRCONIUM OXIDE;

EID: 71049159606     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPFA.2009.5232568     Document Type: Conference Paper
Times cited : (5)

References (5)
  • 1
    • 0004040377 scopus 로고    scopus 로고
    • Edition. (accessed 02/09
    • International Technology Roadmap for Semiconductors, Front End processes, 2007 Edition. http://www.itrs.net/(accessed 02/09).
    • (2007) Front End Processes


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.