A PSPICE circuit modeling of strained AlGaInN laser diode based on the multilevel rate equations

Journal of the Optical Society of Korea

Volumn 13, Issue 3, 2009, Pages 386-391

  Lim, Dong Wook ^a   Cho, Hyung Uk ^a   Sung, Hyuk Kee ^a   Yi, Jong Chang ^a   Jhon, Young Min ^b  

^a Hong Ik University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

AlGaInN blue LDs; Equivalent circuit; PSPICE; Three level rate equation

Indexed keywords

EID: 70849084610     PISSN: 12264776     EISSN: None     Source Type: Journal    
DOI: 10.3807/JOSK.2009.13.3.386     Document Type: Article

References (15)

1. M. Morishita, T. Ohmi, and J. Nishizawa, "Impedance characteristics of double heterostructure laser diodes," Solid State Electron., 22, 951-962 (1979).
2. J. Katz, S. Margalit, C. Harder, D. Wilt, and A. Yariv, "The intrinsic electrical equivalent circuit of a laser diode," IEEE J. Quantum Electron. 17, 4-7 (1981).
3. L. V. T. Nguyen, A. J. Lowery, P. C. R. Gurney, and D. Novak, "A time-domain model for high-speed quantumwell lasers including carrier transport effects," IEEE J. Quantum Electron. 1, 494-504 (1995).
4. D. McDonald and R. F. O'Dowd,"Comparison of two-and three-level rate equations in the modeling of quantumwell lasers," IEEE J. Quantum Electron. 31, 1927-1934 (1995).
5. J. C. Yi and N. Dagli, "Finite-element analysis of valence band structure and optical properties of quantum-wire arrays on vicinal substrates," IEEE J. Quantum Electron. 31, 208-218 (1995).
6. R. Nagarajan, M. Ishikawa, T. Fukushima, R. S. Geels, and J. E. Bowers, "High speed quantum-well lasers and carrier transport effects," IEEE J. Quantum Electron. 28, 1990-2008 (1992).
7. W. H. Fan, S. M. Olaizola, J.-P. R. Wells, D. J. Mowbray, M. S. Skolnick, A. M. Fox, T. Wang, and P. J. Parbrook, "Electron capture time in InGaN/GaN multiple quantum wells," in Proc. Conference on Lasers and Electro-optics (San Francisco, California, USA, May 2004), CD, paper CThV2.
8. J. Piprek, Semiconductor Optoelectronic Devices (Academic Press, University of California at Santa Barbara, USA, 2003), Chapter 9.
9. T. Meyer, H. Braun, U. T. Schwarz, S. Tautz, M. Schillgalies, S. Lutgen, and U. Strauss, "Spectral dynamics of 405 nm (Al, In)GaN laser diodes grown on GaN and SiC substrate," Opt. Exp. 16, 6833-6845 (2008).
10. B. P. C. Tsou and D. L. Pulfrey, "A versatile SPICE model for quantum-well lasers," IEEE J. Quantum Electron. 33, 246-254 (1997).
11. S. Nagahama, T. Yamamoto, M. Sano, and T. Mukai, "Blue-violet nitride laser,"Phys. Stat. Sol. (a) 194, 423-427 (2002).
12. H. U. Cho and J. C. Yi, "External feedback effects on the relative intensity noise characteristics of InAlGaN blue laser diodes," J. Opt. Soc. Korea 10, 86-90 (2006).
13. G. Jiamjun, G. Baoxin, and L. Chunguang, "Large signal model of quantum-well lasers for SPICE," Microwave and Optical Technology Letters 39, 295-298 (2003).
14. C. Netzel, R. Doloca, S. Lahmann, U. Rossow, and A. Hangleiter, "Radiative and nonradiative recombination times in optically excited GaInN/GaN quantum wells," Phys. Stat. Sol. (c) 0, 324-328 (2002).
15. M. Grupen, G. Kosinovsky, and K. Hess, "The effect of carrier capture on the modulation bandwidth of quantum well lasers," in Proc. Electron Devices Meeting (Washington, USA, Dec. 1993), pp. 609-612.