Origin of the surface-state band-splitting in ultrathin Bi films: From a Rashba effect to a parity effect

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Hirahara, T ^a   Miyamoto, K ^b   Kimura, A ^b   Niinuma, Y ^a   Bihlmayer, G ^c   Chulkov, E V ^d,e   Nagao, T ^f   Matsuda, I ^a   Qiao, S ^b   Shimada, K ^b   Namatame, H ^b   Taniguchi, M ^b   Hasegawa, S ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d DONOSTIA INTERNATIONAL PHYSICS CENTER DIPC   (Spain)

^e UNIVERSITY OF THE BASQUE COUNTRY UPV EHU   (Spain)

^f NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; SILICON; SPIN DYNAMICS;

BI FILMS; RASHBA EFFECTS; SURFACE-STATE BANDS;

ULTRATHIN FILMS;

EID: 50949097415     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/8/083038     Document Type: Article

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