Temperature dependent gain characteristics in GaN-based vertical-cavity surface-emitting lasers

Optics Express

Volumn 17, Issue 22, 2009, Pages 20149-20154

  Lu, Tien Chang ^a   Cheng, Bo Siao ^a   Liu, Mei Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

LASER PULSES; LASERS; PHOTOLUMINESCENCE; QUANTUM WELL LASERS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

DIFFERENTIAL GAIN; HAKKI-PAOLI METHOD; INJECTED CARRIERS; LASING MODES; LINEWIDTH ENHANCEMENT FACTOR; PHOTOLUMINESCENCE SPECTRUM; TEMPERATURE-DEPENDENT GAINS; THRESHOLD CONDITION;

SURFACE EMITTING LASERS;

GALLIUM; GALLIUM NITRIDE;

ARTICLE; CHEMISTRY; COMPUTER AIDED DESIGN; DIODE LASER; EQUIPMENT; EQUIPMENT DESIGN; REPRODUCIBILITY; SENSITIVITY AND SPECIFICITY; TEMPERATURE;

COMPUTER-AIDED DESIGN; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; LASERS, SEMICONDUCTOR; REPRODUCIBILITY OF RESULTS; SENSITIVITY AND SPECIFICITY; TEMPERATURE;

EID: 70749093103     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.020149     Document Type: Article

References (14)

1. T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, "Room, temperature lasing at blue wavelengths in gallium nitride microcavities," Science 285(5435), 1905-1906 (1999).
2. Y. K. Song, H. Zhou, M. Diagne, A. V. Nurinikko, R. P. Schneider, Jr., C. P. Cuo, M. R. Krames, R. S. Kern, C. Carter-Coinan, and F. A. Kish, "A quasicontinuous wave, optically pumped violet vertical cavity surface emitting laser," Appl. Phys. Lett. 76(13), 1662 (2000).
3. 2 distributed Bragg reflector," Appl. Phys. Lett. 87(8), 081105 (2005).
4. T. C. Lu, C. C. Kao, H. C. Kuo, G. S. Huang, and S. C. Wang, "CW lasing of current injection blue GaN-based vertical cavity surface emitting laser," Appl. Phys. Lett. 92(14), 141102 (2008).
5. Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, "Room-Temperature CW Lasing of a GaN-Based Vertical-Cavity Surface-Emitting Laser by Current Injection," Appl. Phys. Lett. 1, 121102 (2008).
6. C. H. Henry, "Theory of the linewidth of semiconductor lasers," IEEE J. Quantum. Electron. 18(2), 259-264 (1982).
7. B.W. Hakki, and T. L. Paoli, "cw degradation at 300°K of GaAs double-heterostructure junction lasers. II. Electronic gain," J. Appl. Phys. 44(9), 4113 (1973).
8. J. T. Chu, T. C. Lu, M. You, B. J. Su, C. C. Kao, H. C. Kuo, and S. C. Wang, "Emission characteristics of optically pumped GaN-based vertical-cavity surface-emitting lasers," Appl. Phys. Lett. 89(12), 12.1.112 (2006).
9. U. T. Schwarz, E. Sturm, W. Wegscheider, V. Kümmler, A. Lell, and V. Härle, E. Sturm, W. Wegscheider, V. Kummler, A. Lell, and V. Harle, "Optical gain, carrier-induced phase shift, and linewidth enhancement factor in InGaN quantum well lasers," Appl. Phys. Lett. 83(20), 4095 (2003).
10. A. V. Sakharov, W. V. Lundin, I. L. Krestnikov, V. A. Semenov, A. S. Usikov, A. F. Tsatsul'nikov, Yu. G. Musikhin, M. V. Baidakova, Zh. I. Alferov, N. N. Ledentsov, A. Hoffmann, and D. Bimberg, "Surface-mode lasing from stacked InGaN insertions in a GaN matrix," Appl. Phys. Lett. 74(26), 392.1 (1999).
11. M. O. Manasreh, "Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition," Phys. Rev. B 53(24), 16425-16428 (1996).
12. I. D. Henning, and J. V. Collins, "Measurements of the semiconductor laser linewidth broadening factor," Electron. Lett. 19(22), 927 (1983).
13. H. D. Summers, P. Dowd, I. H. White, and M. R. T. Tan, "Calculation of differential gain and linewidth enhancement factorin 980-n.m InGaAs vertical cavity surface-emitting lasers," IEEE Photon. Technol. Lett. 7(7), 736-738 (1995).
14. K. G. Gan, and J. E. Bowers, "Measurement of gain, group index, group velocity dispersion, and linewidth. enhancement factor of an InGaN multiple quantum-well laser diode," IEEE Photon. Technol. Lett. 16(5), 1256-1258 (2004).