Operating temperature and the responsivity of split-off band detectors

Infrared Physics and Technology

Volumn 52, Issue 6, 2009, Pages 241-246

  Perera, A G U ^a   Jayaweera, P V V ^a   Matsik, S G ^a   Liu, H C ^b   Buchanan, M ^b   Wasilewski, Z R ^b  

^a GEORGIA STATE UNIVERSITY   (United States)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

High operating temperature; Split off band detector

Indexed keywords

DETECTOR STRUCTURE; EMITTER LAYERS; FREE CARRIERS; GAAS/ALGAAS; HIGH OPERATING TEMPERATURE; INTERNAL PHOTOEMISSION; IR DETECTOR; NORMAL INCIDENCE; OPERATING TEMPERATURE; PEAK RESPONSIVITY; QUANTUM WELL; RESPONSIVITY; ROOM TEMPERATURE; SPLIT-OFF BAND; SPLIT-OFF BAND DETECTOR; TRANSITION ENERGY;

DIAMOND FILMS; ENERGY GAP; HETEROJUNCTIONS; INFRARED DETECTORS; ORGANIC POLYMERS; SOLIDS; SPIN DYNAMICS; TEMPERATURE;

DETECTORS;

EID: 70649093094     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2009.05.024     Document Type: Article

References (21)

1. Piotrowski J., and Rogalski A. Infrared Physics & Technology 46 (2004) 115-131
2. Watts M.R., Shaw M.J., and Nielson G.N. Nature Photonics 1 (2007) 632-634
3. Gordon N.T., Lees D.J., Bowen G., Phillips T.S., Haigh M., Jones C.L., Maxey C.D., Hipwood L., and Catchpole R.A. Journal of Electronic Materials 35 (2006) 1140-1144
4. Alause H., Knap W., Robert J.L., Planel R., Thierry-Mieg V., Julien F.H., Zekentes K., and Mosser V. Semiconductor Science and Technology 15 (2000) 724-727
5. Ariyawansa G., Perera A.G.U., Su X.H., Chakrabarti S., and Bhattacharya P. Infrared Physics & Technology 50 (2007) 156-161
6. Zhuravlev K.S., Kolosanov V.A., Milekhin A.G., Polovinkin V.G., Shamirzaev T.S., Rakov Y.N., Myakishev Y.B., Fryar J., McGlynn E., and Henry M.O. Semiconductor Science and Technology 19 (2004) S94-S95
7. Hoff J.R., Razeghi M., and Brown G.J. Physical Review B 54 (1996) 10773-10783
8. Kim B.W., Mao E., and Majerfeld A. Journal of Applied Physics 81 (1997) 1883-1889
9. Ekbote S., Cahay M., and Roenker K. Physical Review B 58 (1998) 16315
10. Perera A.G.U., Matsik S.G., Jayaweera P.V.V., Tennakone K., Liu H.C., Buchanan M., Von Winckel G., Stintz A., and Krishna S. Applied Physics Letters 89 (2006) 131118-3
11. Jayaweera P.V.V., Matsik S.G., Perera A.G.U., Liu H.C., Buchanan M., and Wasilewski Z.R. Applied Physics Letters 93 (2008) 021105-3
12. Kane E.O. In: Willardson R.K., and Albert C. (Eds). Semiconductors and Semimetals vol. 1 (1966), Beer Academic Press, New York 75-100
13. Levinshtein M.E., Rumyantsev S.L., and Shur M. Handbook Series on Semiconductor Parameters (1996), World Scientific, Singapore, New Jersey
14. Adomi K., Noto N., Nakamura A., and Takenaka T. Journal of Crystal Growth 124 (1992) 570
15. Nabetani Y., Wakahara A., and Sasaki A. Materials Science and Engineering-Lausanne - B 35 (1995) 454-458
16. Prutskij T.A., Andreev V.M., and Larionov V.R. Solar Energy Materials and Solar Cells 37 (1995) 349-355
17. O.V. Sulima, P.E. Sims, J.A. Cox, M.G. Mauk, R.L. Mueller, R.C. Reedy, Jr., A.M. Khammadov, P.D. Paulson, G.A. Landis, in: High-Temperature AlGaP/GaP Solar Cells for NASA Space Missions, vol. 1, 2003, pp. 737-740.
18. Epple J.H., Sanchez C., Chung T., Cheng K.Y., and Hsieh K.C. Journal of Vacuum Science and Technology B Microelectronics and Nanometer Structures 20 (2002) 2252-2255
19. Yamazoe Y., Nishino T., and Hamakawa Y. IEEE Journal of Quantum Electronics 17 (1981) 139-144
20. Rogalski A. Opto-Electronics Review 12 (2004) 221-245
21. M.Z. Tidrow, W.W. Clark Iii, W. Tipton, R. Hoffman, W.A. Beck, S.C. Tidrow, D.N. Robertson, H.K. Pollehn, K.R. Udayakumar, H.R. Beratan, K.L. Soch, C.M. Hanson, M. Wigdor, in: Uncooled Infrared Detectors and Focal Plane Arrays, Beijing, China, (SPIE), 1998. pp. 178-187.