Infrared light emission from GaAs MESFETs operating at avalanche breakdown conditions

Semiconductor Science and Technology

Volumn 19, Issue 4 SPEC. ISS., 2004, Pages

  Zhuravlev, K S ^a   Kolosanov, V A ^a   Milekhin, A G ^a   Polovinkin, V G ^a   Shamirzaev, T S ^a   Rakov, Yu N ^b   Myakishev, Yu B ^b   Fryar, J ^c   McGlynn, E ^c   Henry, M O ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b 'Oktava' Sci Indust Organization   (Russian Federation)

^c DUBLIN CITY UNIVERSITY   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTROLUMINESCENCE; FREQUENCIES; HOLE MOBILITY; INFRARED RADIATION; LIGHT EMISSION; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS;

AVALANCHE BREAKDOWN; PHOTON ENERGIES;

MESFET DEVICES;

EID: 11144354950     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/4/034     Document Type: Conference Paper

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