Transparent thin film transistors based on InZnO for flexible electronics

Key Engineering Materials

Volumn 380, Issue , 2008, Pages 99-109

  Pearton, S J ^a   Lim, Wantae ^a   Wang, Yu Lin ^a   Shoo, K ^a   Norton, D P ^a   Lee, Jewon ^a,b   Ren, F ^a   Zavada, J M ^c  

^a University of Florida   (United States)

^b Inje University   (South Korea)

^c U S ARMY RESEARCH OFFICE   (United States)

Author keywords

Flexible electronics; Indium zinc oxide; Transparent thin film transistors

Indexed keywords

AMORPHOUS SILICON; ELECTROLUMINESCENCE; FIELD EFFECT TRANSISTORS; FIELD EMISSION DISPLAYS; FLEXIBLE ELECTRONICS; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; LIQUID CRYSTAL DISPLAYS; NANOCRYSTALS; ORGANIC LIGHT EMITTING DIODES (OLED); OXIDE SEMICONDUCTORS; SUBSTRATES; TEMPERATURE; THIN FILM CIRCUITS; THIN FILMS; TIN OXIDES; ZINC OXIDE;

INDIUM ZINC OXIDES; LIGHT DEGRADATION; LOW TEMPERATURES; LOW-FIELD EFFECT; NANOCRYSTALLINES; THIN-FILM TRANSISTOR (TFTS); TRANSISTOR ARRAYS; TRANSPARENT THIN FILM TRANSISTOR;

THIN FILM TRANSISTORS;

EID: 47049123201     PISSN: 10139826     EISSN: 16629795     Source Type: Book Series    
DOI: 10.4028/0-87849-389-1.99     Document Type: Article

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