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Applied Physics Letters

Volumn 95, Issue 20, 2009, Pages

Four discrete Hall resistance states in single-layer Fe film for quaternary memory devices

(7) Yoo, Taehee a Khym, S a Yea, Sun Young a Chung, Sunjae a Lee, Sanghoon a Liu, X b Furdyna, J K b

a Korea University (South Korea)

b UNIVERSITY OF NOTRE DAME (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANOMALOUS HALL EFFECTS; CRYSTALLOGRAPHIC DIRECTIONS; FE FILMS; FIELD PULSE; GAAS; HALL RESISTANCE; MAGNETIC STATE; MEMORY DEVICE; PRACTICAL IMPLEMENTATION; ROOM TEMPERATURE; SINGLE LAYER; VICINAL SURFACE;

HALL EFFECT; METALLIC FILMS;

MAGNETIC FIELD EFFECTS;

EID: 70450253352 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3266826 Document Type: Article

Times cited : (17)

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