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Volumn 42, Issue 22, 2009, Pages
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Temperature increase in nanostructured cells of a magnetic tunnel junction during current-induced magnetization switching
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Author keywords
[No Author keywords available]
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Indexed keywords
A-THERMAL;
APPLIED CURRENT;
CELL ARRAY;
CURRENT-INDUCED MAGNETIZATION SWITCHING;
HIGH-DENSITY;
KEY PARAMETERS;
LATERAL SIZES;
MAGNETIC RANDOM ACCESS MEMORIES;
MAGNETIC TUNNEL JUNCTION;
NANO-STRUCTURED;
PHYSICAL PICTURES;
RESISTANCE-AREA PRODUCTS;
STABILITY PROBLEM;
TEMPERATURE INCREASE;
THREE-DIMENSIONAL NUMERICAL CALCULATIONS;
HEAT RESISTANCE;
MAGNETIC STORAGE;
MAGNETS;
RANDOM ACCESS STORAGE;
SEMICONDUCTOR JUNCTIONS;
TUNNELS;
WAVEGUIDE JUNCTIONS;
WIND TUNNELS;
TUNNEL JUNCTIONS;
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EID: 70450213248
PISSN: 00223727
EISSN: 13616463
Source Type: Journal
DOI: 10.1088/0022-3727/42/22/225003 Document Type: Article |
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Times cited : (15)
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References (12)
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