Failure analysis of halide of epoxy molding compound used for electronic packing

2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009

Volumn , Issue , 2009, Pages 759-762

  Jianhai, Ye ^a   Shengxiang, Bao ^a   Lili, Ma ^a   Dechun, Lv ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC COMPONENT; ELEMENTAL COMPOSITIONS; ENERGY DISPERSIVE SPECTRUM; EPOXY MOLDING COMPOUNDS; FAILURE MECHANISM; LEAD FRAME; MICROELECTRONICS INDUSTRY; PACKING TECHNOLOGY; SCANNING ELECTRON MICROSCOPES; SEMICONDUCTOR PRODUCTS;

CHIP SCALE PACKAGES; ELECTROMAGNETIC COMPATIBILITY; FAILURE ANALYSIS; LEAD COMPOUNDS; MICROELECTRONICS; MOLDING; PACKAGING; PLASTIC MOLDS; QUALITY ASSURANCE; SAFETY FACTOR; SCANNING ELECTRON MICROSCOPY; SHEET MOLDING COMPOUNDS; SPECTRUM ANALYSIS; SPECTRUM ANALYZERS; TRANSISTORS;

PACKAGING MATERIALS;

EID: 70450033955     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEPT.2009.5270648     Document Type: Conference Paper

References (10)

1. J. P. rusius, Che-Yu Li, "Research Summarization of Electronics Packaging," Micro-electronics Technology, Vol. 24, No. 5 (1996), pp. 41-46.
2. G. V. Clatterbraugh, J. A. Weiner, and H. K. Charles, Jr., "Gold-Aluminum intermetallics: Ball bond shear test and thin film reaction couples," IEEE Trans. Compon. Packag. Technol., Vol. CHMT-7, No. 4 (1984), pp. 349-356.
3. L. T. Nguyen, "Reactive Flow Simulation in Transfer Molding of IC Packages," 1993 Proceedings. 43rd IEEE Electronic Components and Technology Conference, 1993, pp. 375-390.
4. S. K. Kang, "Gold-to-Aluminum bonding for TAB application," IEEE Trans. Compon. Packag. Technol., Vol. 15, No. 6 (1992), pp. 998-1004.
5. R. Gale, "Epoxy degradation induced Au-Al intermetallic void formation in plastic encapsulated MOS memories," in Proc. IEEE Int. Rel. Phys. Symp., 1984, pp. 37-47.
6. P. McCluskey, K. Mensah, et al, "Reliability of commercial plastic encapsulated microelectronics at temperatures form 125 C to 300 C," in Proc. IEEE Aerosp. Conf., 2000, pp. 445-450.
7. A. A. Gallo, "Effect of mold compound components on moisture degradation of gold-aluminum bonds in epoxy encapsulated devices," in Proc. IEEE Int. Rel. Phys. Symp., 1990, pp. 244-251.
8. K. N. Ritz, W. T. Stacy, E. K. Broadbent, "The microstructure of ball bond corrosion of failure," in Proc. IEEE Int. Rel. Phys. Symp., 1987, pp. 28-33.
9. H. Chang, K. Hsieh, T. Martens, A. Yang, "Wire-bond void formation during temperature aging," IEEE Trans. Compon. Packag. Technol., Vol. 27, No. 1 (2000), pp. 155-160.
10. K. Mitani, U. M. Gösele, "Wafer Bonding Technology for Silicon-On-Insulator Applications: A Review," Journal of Electronic Materials, Vol. 21, No. 7 (1992), pp.669-676.