Spin relaxation in n-type ZnO quantum wells

Semiconductor Science and Technology

Volumn 24, Issue 11, 2009, Pages

  Lu C ^a   Cheng, J L ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCH EQUATION; COULOMB SCATTERING; ELECTRON DENSITY DEPENDENCE; EXTERNAL ELECTRIC FIELD; GAAS; IMPURITY DENSITY; LOW TEMPERATURES; NONMONOTONIC; QUANTUM WELL; SPIN RELAXATION; SPIN RELAXATION TIME; TEMPERATURE DEPENDENCE; WELL WIDTH; ZNO;

CARRIER CONCENTRATION; ELECTRIC FIELDS; ELECTRON DENSITY MEASUREMENT; ELECTRONS; RELAXATION PROCESSES; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

SPIN DYNAMICS;

EID: 70449880089     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/11/115010     Document Type: Article

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