Microstructure and electronic properties of zinc nitride thin films

2009 IEEE Nanotechnology Materials and Devices Conference, NMDC 2009

Volumn , Issue , 2009, Pages 33-37

  Georgiev, Daniel G ^a   Moening, Joseph P ^a   Naleshwar, Sandeepkumar ^a   Jayatissa, Ahalapitiya H ^a  

^a Toledo   (United States)

Author keywords

AES; Optical properties; Raman spectroscopy; Reactive sputtering; Thin Films; XPS; Zinc nitride

Indexed keywords

AES; BAND GAPS; ENVIRONMENT FRIENDLY; FABRICATION COST; NITRIDE FILMS; NITRIDE THIN FILMS; OPTICAL AND ELECTRICAL PROPERTIES; OTHER APPLICATIONS; XPS; ZNO;

ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; FABRICATION; FILM PREPARATION; MICROSTRUCTURE; NANOTECHNOLOGY; NITRIDES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 70449632796     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2009.5167531     Document Type: Conference Paper

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