Total ionization dose effects and single-event effects studies of a 0.25 μm silicon-an-sapphire CMOS technology

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 2007, Pages

  Liu, Tiankuan ^a   Chen, Wickham ^b   Gui, Ping ^b   Yang, Cheng An ^a,c   Zhang, Junheng ^b   Zhu, Peiqing ^b   Xiang, Annie C ^a   Ye, Jingbo ^a   Stroynowski, Ryszard ^a  

^a SOUTHERN METHODIST UNIVERSITY   (United States)

^b Southern Methodist University   (United States)

^c Capital One Services Inc   (United States)

Author keywords

CMOSFETs; Radiation effects; Silicon on sapphire

Indexed keywords

CMOSFETS; FLUENCES; RADIATION TOLERANT; SAPPHIRE CMOS; SILICON-ON-SAPPHIRE; SILICON-ON-SAPPHIRE CMOS; SINGLE EVENT EFFECTS; TOTAL DOSE; TOTAL IONIZATION DOSE EFFECTS;

CMOS INTEGRATED CIRCUITS; CORUNDUM; IONIZATION; PARTICLE DETECTORS; SAPPHIRE;

RADIATION EFFECTS;

EID: 70449585304     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RADECS.2007.5205470     Document Type: Conference Paper

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