A 310 GHz CMOS UWB low-noise amplifier with ESD protection circuits

IEEE Microwave and Wireless Components Letters

Volumn 19, Issue 11, 2009, Pages 737-739

  Wu, Chung Yu ^a   Lo, Yi Kai ^a   Chen, Min Chiao ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

CMOS; Electrostatic discharge (ESD); Low noise amplifier (LNA); Ultra wide band (UWB)

Indexed keywords

CHIP AREAS; CLAMP CIRCUIT; CMOS; COMMON GATES; DC POWER; ELECTROSTATIC DISCHARGE (ESD); ESD PROTECTION CIRCUIT; FULLY INTEGRATED; INPUT MATCHING NETWORKS; INPUT RETURN LOSS; LNA CIRCUIT; LOW NOISE FIGURE; LOW POWER; LOW-NOISE AMPLIFIER (LNA); LOW-POWER CONSUMPTION; MEASURED RESULTS; ON CHIPS; OUTPUT RETURN LOSS; POWER GAINS; PROTECTION CIRCUITS; STATIC DISCHARGE; SYSTEM ROBUSTNESS;

ELECTRIC POWER UTILIZATION; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; LOW NOISE AMPLIFIERS;

AUDIO FREQUENCY AMPLIFIERS;

EID: 70449519992     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2009.2032022     Document Type: Article

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