2.5 dB NF 3.1-10.6 GHz CMOS UWB LNA with small group-delay variation

Electronics Letters

Volumn 44, Issue 8, 2008, Pages 528-530

  Yang, H Y ^a   Lin, Y S ^a   Chen, C C ^a  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; CMOS INTEGRATED CIRCUITS; OPTICAL LOSSES;

GROUP-DELAY VARIATION; NOISE FIGURE (NF);

LOW NOISE AMPLIFIERS;

EID: 42149097193     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20083425     Document Type: Article

References (5)

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2. Bevilacqua, A., and Niknejad, A.M.: ' An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers ', IEEE J. Solid-State Circuits, 2004, 39, (12), p. 2259-2268 10.1109/JSSC.2004.836338 0018-9200
3. Lu, Y., Yeo, K.S., Cabuk, A., Ma, J., Do, M.A., and Lu, Z.: ' A novel CMOS low noise amplifier design for 3.1-to-10.6-GHz ultra-wide-band wireless receiver ', IEEE Trans. Circuits Syst. I: Reg. Pprs., 2006, 53, (8), p. 1683-1692
4. Park, Y., Lee, C.H., Cressler, J.D., and Laskar, J.: ' Theoretical analysis of a low dispersion SiGe LNA for ultra-wideband applications ', IEEE Microw. Wirel. Compon. Lett., 2006, 16, (9), p. 517-519 1531-1309
5. Wang, T., Chen, H.C., Chiu, H.W., Lin, Y.S., Huang, G.W., and Lu, S.S.: ' Micromachined CMOS LNA and VCO by CMOS compatible ICP deep trench technology ', IEEE Trans. Microw. Theory Tech., 2006, 54, (2), p. 580-588 10.1109/TMTT.2005.862715 0018-9480