A packaged and ESD-protected inductorless 0.1-8 GHz wideband CMOS LNA

IEEE Microwave and Wireless Components Letters

Volumn 18, Issue 6, 2008, Pages 416-418

  Chang, Tienyu ^a,b   Chen, Jinghong ^a,c   Rigge, Lawrence ^d   Lin, Jenshan ^a,b  

^a IEEE

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^c ANALOG DEVICES INC   (United States)

^d LSI Corporation   (United States)

Author keywords

Active inductor; CMOS; Electro static discharge (ESD); Low noise amplifier (LNA); Resistive feedback

Indexed keywords

AUDIO FREQUENCY AMPLIFIERS; BROADBAND AMPLIFIERS; COMPUTER NETWORKS; ENERGY STORAGE; LOW NOISE AMPLIFIERS; POWER INDUCTORS; TECHNOLOGY;

3 DB BANDWIDTH; ACTIVE AREAS; ACTIVE INDUCTORS; CMOS LNA; CMOS TECHNOLOGIES; ELECTRO STATIC DISCHARGE (ESD); HIGH GAIN; INDUCTORLESS; LOW NOISE; LOW NOISE AMPLIFIER (LNA); RADIO FREQUENCY (RF); RESISTIVE FEEDBACK (RFB); RETURN LOSS (RL); SYSTEM INTEGRATION (SI); THIRD ORDER INTERMODULATION (IM3); VOLTAGE GAIN; WIDE BANDS; WIDE BANDWIDTH;

AMPLIFIERS (ELECTRONIC);

EID: 45149115372     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2008.922677     Document Type: Article

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