Novel single-wafer single-chamber dry and wet hybrid system for stripping and in situ cleaning of high-dose ion-implanted photoresists

IEEE Transactions on Semiconductor Manufacturing

Volumn 22, Issue 4, 2009, Pages 468-474

  Hattori, Takeshi ^a,b   Kim, Yi Jung ^c   Yoon, Changro ^c   Cho, Jung Keun ^c  

^a Hattori Consulting International   (Japan)

^b Hanyang University   (South Korea)

^c SEMES   (South Korea)

Author keywords

Atmospheric pressure plasma; Dry and wet hybrid system; High dose ion implantation; Photoresist removal; Single wafer spin cleaning; Sulfuric acid x2013; hydrogen peroxide mixture (SPM)

Indexed keywords

ATMOSPHERIC-PRESSURE PLASMA; DRY AND WET HYBRID SYSTEM; HIGH-DOSE ION IMPLANTATION; PHOTORESIST REMOVAL; SINGLE-WAFER SPIN CLEANING;

ACIDS; ATMOSPHERIC CHEMISTRY; CURING; ELECTRIC GROUNDING; HYBRID COMPUTERS; HYBRID SYSTEMS; HYDROGEN PEROXIDE; ION BOMBARDMENT; ION IMPLANTATION; OXIDATION; PHOTORESISTORS; PHOTORESISTS; PLASMAS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SPIN DYNAMICS; STRIPPING (DYES); SULFURIC ACID;

SILICON WAFERS;

EID: 70449515328     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2009.2031766     Document Type: Conference Paper

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