Etching of silicon nanowires on Ag(1 1 0) by atomic hydrogen

Surface Science

Volumn 603, Issue 23, 2009, Pages 3350-3354

  Salomon, E ^a   Angot, T ^a   Thomas, C ^a   Layet, J M ^a   Palmgren, P ^b   Nlebedim, C I ^b   Gothelid M ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Atomic hydrogen; Electron Energy Loss Spectroscopy; Scanning Tunnelling Microscopy; Silicon nanowires; X Ray Photoelectron Spectroscopy

Indexed keywords

ATOMIC HYDROGEN; HIGH RESOLUTION; HIGH RESOLUTION ELECTRON ENERGY LOSS SPECTROSCOPY; HYDROGEN ATOMS; SCANNING TUNNELLING MICROSCOPY; SI NANOWIRE; SILICON NANOWIRES;

ADSORPTION; ATOMIC SPECTROSCOPY; ATOMS; DISSOCIATION; ELECTRIC WIRE; ELECTRON EMISSION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ELECTRONS; ENERGY DISSIPATION; HIGH RESOLUTION ELECTRON MICROSCOPY; HYDROGEN; METAL RECOVERY; NANOWIRES; NUCLEAR INSTRUMENTATION; PHOTOELECTRICITY; PHOTOIONIZATION; PHOTONS; SCANNING; SCANNING TUNNELING MICROSCOPY; SILICON; SILVER; WIND TUNNELS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70449511131     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2009.09.023     Document Type: Article

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