Grating-gate tunable plasmon absorption in InP and GaN based HEMTs

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7467, Issue , 2009, Pages

  Peale, R E ^a   Saxena, H ^a   Buchwald, W R ^b   Aizin, G ^c   Muravjov, A V ^d,e   Veksler, D B ^d   Pala, N ^f   Hu, X ^g   Gaska, R ^g   Shur, M S ^d  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c CITY UNIVERSITY OF NEW YORK   (United States)

^d RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^e INSTITUTE FOR PHYSICS OF MICROSTRUCTURES   (Russian Federation)

^f The Department of Electrical and Computer Engineering   (United States)

^g SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

2deg; Grating gate devices; HEMT; Plasmons; Terahertz detectors

Indexed keywords

2DEG; ALGAN/GAN; FREQUENCY RANGES; GRATING-GATE DEVICES; HARMONIC RESONANCE; HEMT; INGAAS/INP; INP; LOWER FREQUENCIES; MATERIALS SYSTEMS; MC-DONALD; MOSFETS; NARROW BANDS; NEGATIVE GATE; PLASMON ABSORPTION; PLASMON RESONANCES; RESONANT ABSORPTION; TERAHERTZ DETECTORS; THZ RADIATION; VOLTAGE-TUNABLE;

ELECTRON GAS; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM NITRIDE; GAS ABSORPTION; NANOPHOTONICS; OPTICAL DATA STORAGE; PHOTONICS; PLASMONS; RESONANCE; SEMICONDUCTING GALLIUM; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 70449470095     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.826187     Document Type: Conference Paper

References (6)

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