High energy electron irradiation of ion implanted MOS structures with different oxide thickness

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 174, Issue 3, 2001, Pages 324-328

  Kaschieva, S ^a   Alexandrova, S ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRON IRRADIATION; ELECTRON TRAPS; INTERFACES (MATERIALS); ION IMPLANTATION; RADIATION EFFECTS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

THERMALLY STIMULATED CHARGE (TSC) METHOD;

MOS DEVICES;

EID: 0035312101     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(00)00522-X     Document Type: Article

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