Electrical characterization of defects induced by 12 MeV electrons in p-type Si-SiO2 structures

Vacuum

Volumn 51, Issue 2, 1998, Pages 235-237

  Stefanov, K G ^a   Kaschieva, S ^b   Karpuzov, D ^a  

^a INSTITUTE OF ELECTRONICS   (Bulgaria)

^b INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON TRAPS; ENERGY GAP;

HIGH ENERGY ELECTRONS;

ELECTRON IRRADIATION;

EID: 0032184255     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0042-207X(98)00166-3     Document Type: Article

References (5)

1. Kaschieva, S., Nuclear Instr. Meth., 1994, B93, 274.
2. Nakashima, K. and Inuish, J. J., Phys. Soc. Jap., 1980, 29, 1500.
3. Cheng, I. J., in Radiation Effects in Semiconductors, ed. F. L. Vook, Plenum Press, New York, 1988.
4. Konozenko, I. D. and Semeniuk, A. K., in Radiation Effect in Si, Naukova Dumka, Kiev, 1974.
5. Vavilov, V. and Uhin, N., in Radiation Effects in Semiconductors, Atomizdat Moscow, 1969.