Effect of annealing profile on defect annihilation, crystallinity and size distribution of germanium nanodots in silicon oxide matrix

Applied Physics Letters

Volumn 83, Issue 10, 2003, Pages 2058-2060

  Kan, E W H ^a,b   Choi, W K ^a,b   Leoy, C C ^a,b   Chim, W K ^a,b   Antoniadis, D A ^a,c   Fitzgerald, E A ^a,c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTALLIZATION; GERMANIUM COMPOUNDS; HIGH TEMPERATURE EFFECTS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SILICA; TRANSMISSION ELECTRON MICROSCOPY;

SIZE DISTRIBUTION;

NANOSTRUCTURED MATERIALS;

EID: 0141920579     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1608480     Document Type: Article

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