Molecular beam epitaxial growth of GaN using ammonia cluster ion beam as a nitrogen source

Physica Status Solidi C: Conferences

Volumn 1, Issue 10, 2004, Pages 2478-2482

  Saito, H ^a   Taguchi, M ^a   Ohishi, M ^a   Yoneta, M ^a   Imai, K ^b  

^a OKAYAMA UNIVERSITY OF SCIENCE   (Japan)

^b HOKKAIDO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; CURRENT DENSITY; ION BEAMS; IRRADIATION; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; NITROGEN; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SAPPHIRE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

CLUSTER ION BEAMS; EPILAYERS; ION CURRENT DENSITY; NITRIDATION;

GALLIUM NITRIDE;

EID: 7044235470     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200405021     Document Type: Conference Paper

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