메뉴 건너뛰기




Volumn 56, Issue 11, 2009, Pages 2819-2824

Experimental study on power consumption in lifetime engineered power diodes

Author keywords

Helium; Lifetime; Platinum; Power diodes

Indexed keywords

COMBINED EFFECT; ENERGY CONSUMPTION; ENGINEERING TREATMENT; EXPERIMENTAL STUDIES; HELIUM IMPLANTATION; LIFETIME; POWER CONSUMPTION; POWER DIODE; POWER DIODES; QUANTITATIVE STUDY; SWITCHING OPERATIONS;

EID: 70350728658     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2031005     Document Type: Article
Times cited : (27)

References (9)
  • 2
    • 0033154001 scopus 로고    scopus 로고
    • Numerical analysis of local lifetime control for high-speed low loss P-i-N diode design
    • Apr
    • E. Napoli, A. G. M. Strollo, and P. Spirito, "Numerical analysis of local lifetime control for high-speed low loss P-i-N diode design," IEEE Trans. Electron Devices, vol. 14, no. 4, pp. 615-621, Apr. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.14 , Issue.4 , pp. 615-621
    • Napoli, E.1    Strollo, A.G.M.2    Spirito, P.3
  • 3
    • 0036645823 scopus 로고    scopus 로고
    • High power P-i-N diode with the local lifetime control based on the proximity gettering of platinum
    • Jul
    • J. Vobecky and P. Hazdra, "High power P-i-N diode with the local lifetime control based on the proximity gettering of platinum," IEEE Electron Device Lett., vol. 23, no. 7, pp. 392-394, Jul. 2002.
    • (2002) IEEE Electron Device Lett , vol.23 , Issue.7 , pp. 392-394
    • Vobecky, J.1    Hazdra, P.2
  • 4
    • 29244454297 scopus 로고    scopus 로고
    • High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects
    • Dec
    • J. Vobecky and P. Hazdra, "High-power P-i-N diode with local lifetime control using palladium diffusion controlled by radiation defects," IEEE Electron Device Lett., vol. 26, no. 12, pp. 873-875, Dec. 2005.
    • (2005) IEEE Electron Device Lett , vol.26 , Issue.12 , pp. 873-875
    • Vobecky, J.1    Hazdra, P.2
  • 5
    • 0037381389 scopus 로고    scopus 로고
    • Dynamic avalanche and reliability of high voltage diodes
    • Apr
    • J. Lutz and M. Domeji, "Dynamic avalanche and reliability of high voltage diodes," Microelectron. Reliab., vol. 43, no. 4, pp. 529-536, Apr. 2003.
    • (2003) Microelectron. Reliab , vol.43 , Issue.4 , pp. 529-536
    • Lutz, J.1    Domeji, M.2
  • 6
    • 29244433184 scopus 로고    scopus 로고
    • Compensation and doping effects in heavily helium-radiated silicon for power device applications
    • Mar
    • R. Siemieniec, H. J. Schulze, F. J. Niedernostheide, W. Sudkamp, and J. Lutz, "Compensation and doping effects in heavily helium-radiated silicon for power device applications," Microelectron. J., vol. 37, no. 3, pp. 204-212, Mar. 2006.
    • (2006) Microelectron. J , vol.37 , Issue.3 , pp. 204-212
    • Siemieniec, R.1    Schulze, H.J.2    Niedernostheide, F.J.3    Sudkamp, W.4    Lutz, J.5
  • 7
    • 38849083270 scopus 로고    scopus 로고
    • S. Daliento, L. Mele, P. Spirito, L. Gialanella, and B. N. Limata, Lifetime and resistivity modifications induced by helium implantation in silicon: Experimental analysis with an ac profiling technique, J. Appl. Phys., 103, no. 2, pp. 024 504-1-024 504-8, Jan. 2008.
    • S. Daliento, L. Mele, P. Spirito, L. Gialanella, and B. N. Limata, "Lifetime and resistivity modifications induced by helium implantation in silicon: Experimental analysis with an ac profiling technique," J. Appl. Phys., vol. 103, no. 2, pp. 024 504-1-024 504-8, Jan. 2008.
  • 8
    • 0017504430 scopus 로고
    • Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifier
    • Jun
    • B. J. Baliga and E. Sun, "Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifier," IEEE Trans. Electron Devices, vol. ED-24, no. 6, pp. 685-688, Jun. 1977.
    • (1977) IEEE Trans. Electron Devices , vol.ED-24 , Issue.6 , pp. 685-688
    • Baliga, B.J.1    Sun, E.2
  • 9
    • 36149042593 scopus 로고
    • Hydrogen-related deep levels in proton-bombarded silicon
    • Dec
    • K. Irmscher, H. Klose, and K. Maass, "Hydrogen-related deep levels in proton-bombarded silicon," J. Phys. C, Solid State Phys., vol. 17, no. 35, pp. 6317-6329, Dec. 1984.
    • (1984) J. Phys. C, Solid State Phys , vol.17 , Issue.35 , pp. 6317-6329
    • Irmscher, K.1    Klose, H.2    Maass, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.