Tunnel magnetoresistance in epitaxially grown magnetic tunnel junctions using Heusler alloy electrode and MgO barrier

Journal of Physics D: Applied Physics

Volumn 42, Issue 19, 2009, Pages

  Tsunegi, S ^a   Sakuraba, Y ^b   Oogane, M ^a   Telling, N D ^c,d   Shelford, L R ^e   Arenholz, E ^f   Van Der Laan, G ^e,g   Hicken, R J ^e   Takanashi, K ^b   Ando, Y ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

^d DARESBURY LABORATORY   (United Kingdom)

^e UNIVERSITY OF EXETER   (United Kingdom)

^f LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^g DIAMOND LIGHT SOURCE LTD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS VOLTAGE DEPENDENCE; EPITAXIALLY GROWN; HEUSLER ALLOYS; INELASTIC SPIN; MAGNETIC CONFIGURATION; MAGNETIC TUNNEL JUNCTION; MGO BARRIER; ROOM TEMPERATURE; STACKING STRUCTURES; TEMPERATURE DEPENDENCE; TUNNEL MAGNETORESISTANCE; TUNNELLING CONDUCTANCE;

ELECTRIC RESISTANCE; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETOELECTRONICS; MAGNETORESISTANCE; SEMICONDUCTOR JUNCTIONS; TUNNEL JUNCTIONS; TUNNELING (EXCAVATION); TUNNELS; WAVEGUIDE JUNCTIONS;

WIND TUNNELS;

EID: 70350676174     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/19/195004     Document Type: Article

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