Analysis of strain compensation in quantum dot embedded GaAs solar cells

Materials Research Society Symposium Proceedings

Volumn 1031, Issue , 2008, Pages 37-42

  Bailey, Christopher ^a   Cress, Cory ^a   Raffaelle, Ryne ^a   Hubbard, Seth ^a   Maurer, William ^a   Wilt, David ^b   Bailey, Sheila ^b  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AIR MASS ZEROS; CRYSTALLINE QUALITY; EMBEDDED TESTS; GAAS; GAAS SOLAR CELLS; INAS; INAS QUANTUM DOTS; QUANTUM DOT; SOLAR CELL PERFORMANCE; SPECTRAL RESPONSIVITY; STACKED LAYER; STRAIN COMPENSATION; TEST STRUCTURE; VOLTAGE DATA;

ATOMIC FORCE MICROSCOPY; DIFFRACTION; GALLIUM ALLOYS; INDIUM ARSENIDE; OPEN CIRCUIT VOLTAGE; OPTICAL WAVEGUIDES; PHOTOVOLTAIC CELLS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SOLAR CELLS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70350602402     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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