Magnetic properties of Ni doped gallium nitride with vacancy induced defect

Journal of Magnetism and Magnetic Materials

Volumn 322, Issue 2, 2010, Pages 238-241

  Munawar Basha, S ^a   Ramasubramanian, S ^a   Thangavel, R ^b   Rajagopalan, M ^a   Kumar, J ^a  

^a ANNA UNIVERSITY   (India)

^b RESEARCH CENTER FOR APPLIED SCIENCES   (Taiwan)

Author keywords

Dilute magnetic semiconductor; Gallium nitride; Magnetic moment; Vacancy

Indexed keywords

ACCEPTOR LEVELS; DILUTE MAGNETIC SEMICONDUCTOR; FERROMAGNETIC PROPERTIES; FERROMAGNETIC STATE; FIRST PRINCIPLE CALCULATIONS; INDUCED DEFECTS; N VACANCY; NI ATOMS; NI-DOPED; NI-DOPING; NICKEL DOPING; NITROGEN ATOM; TETRAHEDRAL BONDING; TIGHT BINDING LINEAR MUFFIN-TIN ORBITALS; WURTZITE GAN;

ATOMS; CHARGE TRANSFER; DEFECTS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); FERROMAGNETIC MATERIALS; GALLIUM ALLOYS; GALLIUM NITRIDE; ION EXCHANGE; MAGNETIC MOMENTS; MAGNETIC PROPERTIES; MAGNETIC SEMICONDUCTORS; NICKEL; NICKEL ALLOYS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GALLIUM; TIN; TRANSITION METALS; VACANCIES; ZINC SULFIDE;

FERROMAGNETISM;

EID: 70350489491     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.09.028     Document Type: Article

References (23)

1. Furdyna. J.K. J. Appl. Phys. 64 (1988) R29
2. Dietl T., Ohno h., Matsukura F., Cibert J., and Ferrand D. Science 287 (2000) 1019
3. van Schilfgaarde M., and Mryasov O.N. Phys. Rev. B 63 (2001) 233205
4. Sato K., and Katayama-Yoshida. H. Jpn. J. Appl. Phys. 40 5B (2001) L485
5. Akinaga H., Nemeth S., De Boeck J., Nistor L., Bender H., Borghs G., Ofuchi H., and Oshima M. Appl. Phys. Lett. 9 (2000) 774377
6. Rosa A.L., and Ahuja R. Appl. Phys. Lett. 91 (2007) 232109
7. Cui X.Y., E Medvedeva J., Delley B., Freeman A.J., Newman N., and Stampfl C. Phys. Rev. Lett. 95 (2005) 256404
8. Wang Q., Sun Q., Jena P., Yu J.Z., Note R., and Kawazoe Y. Phys. Rev. B 72 (2005) 045435
9. Wang Q., Sun Q., Jena P., and Kawazoe Y. Phys. Rev. B 75 (2007) 075312
10. Goumri-Said S., and Kanoun M.B. J. Phys. D., Appl. Phys. 41 (2008) 035004
11. Hong J. J. Appl. Phys. 103 (2008) 063907
12. Sanyal B., Bengone O., and Mirbit S. Phys. Rev. B 68 (2003) 205210
13. oongoo Kang J., and Chang K.J. J. Appl. Phys. 102 (2007) 083910
14. Anderson O.K. Phys. Rev. B12 (1975) 3060
15. von Barth U., and Hedin L. J. Phys. C: Solid State Phys. 5 (1972) 1629
16. Lagerstedt O., and Monemar A. Phys. Rev. B 19 (1979) 3064
17. Stokes H.T., Hatch D.M., and Kim J.S. Acta Cryst. A 43 (1987) 81
18. Das G.P., Rao B.K., and Jena P. Phys. Rev. B 68 (2003) 35207
19. Das G.P., Rao B.K., Jena P., and Kawazoe Y. Comput. Mater. Sci. 36 (2006) 84
20. Assadi M.H.N., Zhang Y.B., and Li S. J. Phys.: Condens. Matter 21 (2009) 185503
21. Wang Q., Sun Q., and Jena P. Phys. Rev. Lett. 95 (2005) 167202
22. Wang Q., Sun Q., Jena P., and Kawazoe Y. Phys. Rev. Lett. 93 (2004) 155501
23. Pan H., Ping Feng Y., Yun Wu Q., Gao Huang Z., and Lin J. Phys. Rev. B 77 (2008) 125211