Oxide dielectrics: A change of direction

Nature Materials

Volumn 8, Issue 11, 2009, Pages 853-854

  Klauk, Hagen ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTROLYTES; FREQUENCY RESPONSE; GATE DIELECTRICS; IONIC CONDUCTIVITY; METAL IONS; PERMITTIVITY; POLYELECTROLYTES; POLYMER FILMS; SOLID ELECTROLYTES;

ALUMINUM OXIDES; DIELECTRIC CAPACITANCE; GATE LEAKAGES; HIGHER FREQUENCIES; LIQUID ELECTROLYTES; OXIDE DIELECTRIC; RELATIVE PERMITTIVITY; SOLID POLYMER ELECTROLYTES;

FIELD EFFECT TRANSISTORS;

EID: 70350458829     PISSN: 14761122     EISSN: 14764660     Source Type: Journal    
DOI: 10.1038/nmat2552     Document Type: Article

References (3)

1. Pal, B. N., Dhar, B. M., See, K. C. & Katz, H. E. Nature Mater. 8, 898-903 (2009).
2. Robertson, J. Rep. Prog. Phys. 69, 327-396 (2006). www.intel.com/ technology/architecture-silicon/45nm-core2/ index.htm?iid=tech-45nm+45nm
3. Cho, J. H. et al. Nature Mater. 7, 900-906 (2008).