Manifestation of the injection mechanism of efficiency droop in the temperature dependence of the external quantum efficiency of AlInGaN-based light-emitting diodes

Semiconductors

Volumn 43, Issue 10, 2009, Pages 1351-1355

  Pavluchenko, A S ^a   Rozhansky, I V ^a   Zakheim, D A ^a,b  

^a IOFFE INSTITUTE   (Russian Federation)

^b ZAO Epi center   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 70350379371     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/S1063782609100170     Document Type: Article

References (9)

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