Field-effect and frequency dependent transport in semiconductor-enriched single-wall carbon nanotube network device

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 11, 2009, Pages 6533-6537

  Jaiswal, Manu ^a   Sangeeth, C S Suchand ^a   Wang, Wei ^b   Sun, Ya Ping ^b   Menon, Reghu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b CLEMSON UNIVERSITY   (United States)

Author keywords

Ac impedance; Electrolyte gated field effect device; Transparent swnt

Indexed keywords

AC IMPEDANCE; AC RESPONSE; CHARGE TRANSPORT; ELECTRICAL RESISTANCES; EMPIRICAL RELATIONS; FACILE FABRICATION; FIELD-EFFECT; FIELD-EFFECT DEVICES; FREQUENCY-DEPENDENT TRANSPORT; FUNCTION OF FREQUENCY; GATE VOLTAGES; OPTICAL RESPONSE; OPTICAL TRANSPARENCY; SINGLE-WALL CARBON NANOTUBES; SODIUM CHLORIDE SOLUTION; TIME RESPONSE; TRANSPARENT SWNT;

CARBON NANOTUBES; ELECTRIC RESISTANCE; ELECTROLYSIS; ELECTROLYTES; SODIUM CHLORIDE; TRANSPARENCY;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 70350327318     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1332     Document Type: Article

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