Synthesis, structural characterization and formation mechanism of ferroelectric bismuth vanadate nanotubes

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 11, 2009, Pages 6549-6553

  Singh, Satyendra ^a   Kumari, Neelam ^a   Varma, K B R ^a   Krupanidhi, S B ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Anodic alumina template; Bismuth vanadate; Electron microscopy; Nanofabrication; Nanotubes; Sol gel process

Indexed keywords

AAO TEMPLATE; ANODIC ALUMINA TEMPLATE; ANODIC ALUMINUM OXIDE; BISMUTH VANADATE; BISMUTH VANADATES; EDX ANALYSIS; ENERGY DISPERSIVE X-RAY SPECTROSCOPY; FORMATION MECHANISM; HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPES; NANO-POROUS; NANOFABRICATION; POLYCRYSTALLINE; PORE DIAMETERS; SCANNING ELECTRON MICROSCOPES; SEM; SOL-GEL METHODS; STRUCTURAL CHARACTERIZATION; TEM; XRD; XRD STUDIES;

ALUMINA; ALUMINUM SHEET; BISMUTH; CRYSTAL STRUCTURE; ELECTRON MICROSCOPES; ELECTRONS; FERROELECTRICITY; GELATION; GELS; NANOSTRUCTURED MATERIALS; NANOTUBES; SCANNING ELECTRON MICROSCOPY; SOL-GELS; SOLS; STOICHIOMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY POWDER DIFFRACTION; X RAY SPECTROSCOPY;

SOL-GEL PROCESS;

EID: 70350312803     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1300     Document Type: Article

References (25)

1. S. Iijima, Nature 354, 56 (1991).
2. J. Hu, T. W. Odom, and C. M. Lieber, Acc. Chem. Res. 32, 435 (1999).
3. G. R. Patzke, F. Krumeich, and R. Nesper, Angew. Chem. 114, 2554 (2002).
4. J. Goldberger, R. He, Y. Zhang, S. Lee, H. Yan, H. Choi, and P. Yang, Nature 422, 599 (2003).
5. S. B. Lee, D. T. Mitchell, L. Trofin, T. K. Nevanen, H. Sçderlund, and C. R. Martin, Science 296, 2198 (2002).
6. J. Sha, J. Niu, X. Ma, J. Xu, X. Zhang, Q. Yang, and D. Yang, Adv. Mater. 14, 1219 (2002).
7. J. Junquera and P. Ghosez, Nature 422, 506 (2003).
8. Y. Wang and J. J. Santiago-Aviles, Nanotechnology 15, 32 (2004).
9. Y. Luo, I. Szafraniak, N. D. Zakharov, V. Nagarajan, M. Steinhart, R. B. Wehrspohn, J. H. Wendorff, R. Ramesh, and M. Alexe, Appl. Phys. Lett. 83, 440 (2003).
10. M. W. Chu, I. Szafraniak, R. Scholz, C. Harnagea, D. Hesse, M. Alexe, and U. Gosele, Nat. Mater. 3, 87 (2004).
11. A. Roelofs, I. Schneller, K. Szot, and R. Waser, Appl. Phys. Lett. 81, 5231 (2002).
12. B. A. Hernandez, K. S. Chang, E. R. Fisher, and P. K. Dorhout, Chem. Mater. 4, 480 (2002).
13. X. Y. Zhang, X. Zhao, C. W. Lai, J. Wang, X. G. Tang, and J. Y. Dai, Appl. Phys. Lett. 85, 4190 (2004).
14. S. Singh and S. B. Krupanidhi, Phys. Lett. A 367, 356 (2007).
15. T. Yanagita, H. Tabata, and T. Kawai, Jpn. J. Appl. Phys. 36, 5917 (1997).
16. K. B. R. Varma, G. N. Subbana, T. N. Gururao, and C. N. R. Rao, J. Mater. Res. 5, 1 (1990).
17. M. Joseph, H. Y. Lee, H. Tabata, and K. Kabai, J. Appl. Phy. 88, 1193 (2000).
18. P. Victor, J. Nagaraju, and S. B. Krupanidhi, Semicond. Sci. Technol. 18, 183 (2003).
19. J. W. Pell, J. Y. Ying, and H. C. Loye, Mater. Lett. 25, 157 (1995).
20. J. W. Pell, K. M. Delak, and H. C. Loye, Chem. Mater. 10, 1764 (1998).
21. X. Y. Zhang, C. W. Lai, X. Zhao, D. Y. Wang, and J. Y. Dai, Appl. Phys. Lett. 87, 143102 (2005).
22. Y. Wang and G. Cao, J. Mater. Chem. 17, 894 (2007).
23. B. B. Lakshmi, P. K. Dorhout, and C. R. Martin, Chem. Mater. 9, 857 (1997).
24. B. B. Lakshmi, C. J. Patrissi, and C. R. Martin, Chem. Mater. 9, 2544 (1997).
25. J. C. Hulteen and C. R. Martin, J. Mater. Chem. 7, 1075 (1997).