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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 9 SUPPL. B, 1997, Pages 5917-5920

Atomic force microscopy observation of the initial growth stage and the ferroelectric properties of Bi2VO5.5 films on SrTiO3(100), Si(100) substrates

(3) Yanagita, Takeshi a Tabata, Hitoshi a Kawai, Tomoji a

a OSAKA UNIVERSITY (Japan)

Author keywords

AFM; Bi2VO5.5; Ferroelectric thin film; FRAM

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH COMPOUNDS; CAPACITORS; CRYSTAL ORIENTATION; DEPOSITION; FILM GROWTH; LASER ABLATION; NUCLEATION; PERMITTIVITY; RANDOM ACCESS STORAGE; STRONTIUM COMPOUNDS; ULTRATHIN FILMS;

BISMUTH VANADATE; FERROELECTRIC RANDOM ACCESS MEMORY (FRAM); STRONTIUM TITANATE;

FERROELECTRIC MATERIALS;

EID: 0031223597 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.5917 Document Type: Article

Times cited : (7)

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