Detection of critical defects with E-beam technology for development and monitoring of advanced NAND processes

ASMC (Advanced Semiconductor Manufacturing Conference) Proceedings

Volumn , Issue , 2009, Pages 94-99

  Hayashi, Hiroyuki ^a   Oomura, Masafumi ^a   Ihata, Naoki ^a   Shinkawa, Akihiro ^b   Fan, Frank ^b   Li, Jufeng ^b  

^a TOSHIBA CORPORATION   (Japan)

^b KLA TENCOR CORPORATION   (United States)

Author keywords

E beam inspection (EBI); NAND processes; S N analysis; Voltage contrast (VC)

Indexed keywords

BEAM CONDITIONS; CRITICAL DEFECTS; DETECTION OF DEFECTS; E-BEAM INSPECTION (EBI); ELECTRON BEAM INSPECTIONS; FAST PROCESS; NAND FLASH; NAND FLASH MEMORY; NAND PROCESSES; PROCESS CONDITION; PRODUCTION MONITORING; S/N ANALYSIS; SIGNAL-TO-NOISE ANALYSIS; TEM ANALYSIS; VOLTAGE CONTRAST (VC); YIELD-LIMITING DEFECT;

DEFECTS; ELECTRON BEAMS; INSPECTION; THROUGHPUT; VOLTAGE MEASUREMENT;

FLASH MEMORY;

EID: 70350238110     PISSN: 10788743     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ASMC.2009.5155964     Document Type: Conference Paper

References (3)

1. H. Hayashi, et al., "Development of voltage contrast defect inspection technique for line monitoring 300mm ULSI hp90 logic contact layer", Proc.SPIE, Metrology, Inspection,and Process Control for Micro lithography 2005, Vol.5752, p.997-1008
2. Baltzinger, J., et al., "E-beam inspection of dislocations: product monitoring and process change validation", ASMC, 2004.
3. Ache, A., et al., "Production implementation of state-of-the-art electron beam inspection", ASMC, 2004.