A discontinuous Galerkin solver for full-band Boltzmann-Poisson models

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Volumn , Issue , 2009, Pages

  Cheng, Yingda ^a   Gamba, Irene M ^a   Majorana, Armando ^b   Shu, Chi Wang ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b UNIVERSITY OF CATANIA   (Italy)

^c BROWN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND MODEL; BOLTZMANN; BOLTZMANN-POISSON SYSTEM; DISCONTINUOUS GALERKIN; ELECTRON TRANSPORT; FULL BAND; NUMERICAL TESTS; PARABOLIC BANDS; POISSON MODEL;

ELECTRONICS ENGINEERING; IONIC CONDUCTION; POISSON DISTRIBUTION; POISSON EQUATION; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

GALERKIN METHODS;

EID: 70350234826     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091079     Document Type: Conference Paper

References (14)

1. Y. Cheng, I. M. Gamba, A. Majorana, and C.-W. Shu, "Discontinuous Galerkin solver for the semiconductor Boltzmann equation," SISPAD 07, June 14-17, pp. 257-260, 2007.
2. -, "Discontinuous Galerkin solver for Boltzmann-Poisson transients," J. Comput. Electron., vol. 7, pp. 119-123, 2008.
3. -, "A Discontinuous Galerkin solver for Boltzmann-Poisson systems for semiconductor devices," preprint submitted to Comput. Methods Appl. Mech. Eng., in revision.
4. E. Fatemi and F. Odeh, "Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices," J. Comput. Phys., vol. 108, pp. 209-217, 1993.
5. J. A. Carrillo, I. M. Gamba, A. Majorana, and C.-W. Shu, "A WENOsolver for 1D non-stationary Boltzmann-Poisson system for semiconductor devices," J. Comput. Electron., vol. 1, pp. 365-375, 2002.
6. -, "A WENO-solver for the transients of Boltzmann-Poisson system for semiconductor devices. performance and comparisons with Monte Carlo methods," J. Comput. Phys., vol. 184, pp. 498-525, 2003.
7. -, "2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods," J. Comput. Phys., vol. 214, pp. 55-80, 2006.
8. M. Galler and A. Majorana, "Deterministic and stochastic simulation of electron transport in semiconductors," 6th MAFPD (Kyoto) special issue Vol. 2, pp. 349-365, 2007.
9. M. C. Vecchi, D. Ventura, A. Gnudi, and G.Baccarani, "Incorporating full band-structure effects in spherical harmonics expansion of the Boltzmann transport equation," Proceedings of NUPAD V Conference, vol. 8, pp. 55-58, 1994.
10. S. Smirnov and C. Jungemann, "A full band deterministic model for semiclassical carrier transport in semiconductors," J. Appl. Phys., vol. 99, p. 063707, 1988.
11. A. Majorana, "A comparison between bulk solutions to the Boltzmann equation and the spherical harmonic model for silicon devices," Progress in Industrial Mathematics at ECMI 2000 - Mathematics in Industry, vol. 1, pp. 169-173, 2002.
12. A. Majorana and R. Pidatella, "A finite difference scheme solving the Boltzmann Poisson system for semiconductor devices," J. Comput. Phys., vol. 174, pp. 649-668, 2001.
13. B. Cockburn and C.-W. Shu, "The local discontinuous Galerkin method for time-dependent convection-diffusion systems," SIAM J. Numer. Anal., vol. 35, pp. 2440-2463, 1998.
14. R. Brunetti, C. Jacoboni, F. Venturi, E. Sangiorgib, and B. Riccò, "A many-band silicon model for hot-electron transport at high energies," Solid State Electron., vol. 32, p. 1663, 1989.