Organic thin film transistors using a polyhedral oligomeric silsesquioxane-based photo-patternable insulating material

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 12, 2009, Pages 6923-6927

  Cho, Hyun Duck ^a   Jung, Chung Hwa ^b   Park, Moo Jin ^c   Shim, Hong Ku ^c   Hwang, Do Hoon ^b   Lee, Changhee ^a  

^a Seoul National University   (South Korea)

^b Kumoh National Institute of Technology   (South Korea)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

Organic field effect transistor; Photo patternable insulator; Polyhedral oligomeric silsesquioxane

Indexed keywords

CYCLOHEXENES; EPOXY LAYERS; FIELD-EFFECT MOBILITIES; GATE DIELECTRIC LAYERS; GATE INSULATOR; ON/OFF CURRENT RATIO; ORGANIC ELECTRONICS; ORGANIC FIELD EFFECT TRANSISTOR; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; ORGANIC/INORGANIC HYBRID MATERIALS; P-TYPE; PENTACENE TRANSISTORS; PENTACENES; PHOTO-PATTERNABLE INSULATOR; POLYHEDRAL OLIGOMERIC SILSESQUIOXANE; POLYHEDRAL OLIGOMERIC SILSESQUIOXANES; POLYVINYLPHENOL; SUBTHRESHOLD SLOPE; TRANSISTOR CHARACTERISTICS;

BUILDING MATERIALS; FUNCTIONAL GROUPS; GATE DIELECTRICS; GATES (TRANSISTOR); HYBRID MATERIALS; INSULATION; OLEFINS; PHOTOTRANSISTORS; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS;

FIELD EFFECT TRANSISTORS;

EID: 70350212951     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1648     Document Type: Conference Paper

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