Organic thin film transistor using a photo-curable organic/inorganic hybrid material as a gate dielectric

Journal of Nanoscience and Nanotechnology

Volumn 8, Issue 9, 2008, Pages 4561-4564

  Hwang, Do Hoon ^a   Yang, Yong Suk ^b   Lee, Jeong Ik ^b   Kim, Seong Hyun ^b   Park, Oun Ho ^c   Kim, Ho Cheol ^c   Lee, Victor ^c   Dubois, Geraud ^c   Miller, Robert D ^c  

^a Kumoh National Institute of Technology   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^c IBM ALMADEN RESEARCH CENTER   (United States)

Author keywords

Organic field effect transistor; Photo patternable insulator; Polyhedral oligomeric silsesquioxane

Indexed keywords

ACID GENERATORS; DISSIPATION FACTORS; FIELD EFFECTS; INSULATING PROPERTIES; ORGANIC FIELD EFFECT TRANSISTOR; ORGANIC FIELD EFFECT TRANSISTORS; ORGANIC THIN FILM TRANSISTORS; ORGANIC/INORGANIC HYBRID MATERIALS; OXETANE; PENTACENE; PHOTO-PATTERNABLE INSULATOR; POLYHEDRAL OLIGOMERIC SILSESQUIOXANE; SEMI-CONDUCTORS; UV IRRADIATIONS;

CAPACITANCE; CARRIER MOBILITY; FUNCTIONAL GROUPS; GATE DIELECTRICS; GATES (TRANSISTOR); HYBRID MATERIALS; INSULATION; LEAKAGE CURRENTS; SEMICONDUCTING ORGANIC COMPOUNDS; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 55849132192     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2008.IC38     Document Type: Conference Paper

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