CMOS-based programmable gate ISFET

Electronics Letters

Volumn 44, Issue 22, 2008, Pages 1289-1291

  Georgiou, P ^a   Toumazou, C ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ION SENSITIVE FIELD EFFECT TRANSISTORS; LOGIC GATES;

CAPACITIVELY COUPLED; CHEMICAL SENSING; CMOS PROCESSES; DEVICE MISMATCHES; FLOATING GATES; GATE VOLTAGES; INVERSION OPERATIONS; LOW-POWER; OPERATING POINTS; PROGRAMMABLE GATES; TRAPPED CHARGES; TUNABILITY;

FIELD EFFECT TRANSISTORS;

EID: 54849411304     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20082268     Document Type: Article

References (5)

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3. Shepherd, L., and Toumazou, C.: ' Weak inversion ISFETS for ultra-low-power biochemical sensing and real-time analysis ', Sens. Actuators B. Chem., 2005, 107, (1), p. 468-473 10.1016/j.snb.2004.11.006 0925-4005
4. Shibata, T., and Ohmi, T.: ' A functional MOS transistor featuring gate-level weighted sum and threshold operations ', IEEE Trans. Electron Devices, 1992, 39, (6), p. 1444-1455 10.1109/16.137325 0018-9383
5. Vittoz, E., and Fellrath, J.: ' CMOS analog integrated circuits based on weak inversion operations ', IEEE J. Solid-State Circuits, 1977, 12, (3), p. 224-231 10.1109/JSSC.1977.1050882 0018-9200