Temperature dependence of the band gap of ZnSe1-x Ox

Applied Physics Letters

Volumn 95, Issue 15, 2009, Pages

  Broesler, R ^a,b   Haller, E E ^a,b   Walukiewicz, W ^a   Muranaka, T ^c   Matsumoto, T ^c   Nabetani, Y ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California Berkeley   (United States)

^c UNIVERSITY OF YAMANASHI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANTICROSSINGS; BAND GAPS; OXYGEN CONCENTRATIONS; OXYGEN DEFECT; TEMPERATURE DEPENDENCE;

CRYSTAL GROWTH; ELECTRON MOBILITY; MOLECULAR OXYGEN; PHOTOLUMINESCENCE SPECTROSCOPY; TEMPERATURE DISTRIBUTION;

ENERGY GAP;

EID: 70350074345     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3242026     Document Type: Article

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